features high output power: 39.5 dbm typ high linear gain: 6.5 db typ high efficiency: 25% typ industry standard package internally matched for optimum performance in the 10.7 to 11.7 ghz band california eastern laboratories 8 w x-band internally matched power gaas mesfet NEZ1011-8E the NEZ1011-8E is a power gaas fet which provides high gain, high efficiency and high output power in x-band. the internal input and output matching enables guaranteed perfor- mance to be achieved with only a 50 ? external circuit. the device incorporates a wsi (tungsten silicide) gate structure for high reliability, sio2 glassivation for surface stability, and a plated heat sink for reduced thermal resistance. the NEZ1011-8E transistors are manufactured to nec's strin- gent quality assurance standards to ensure highest reliability and consistent superior performance. description outline dimensions (units in mm) gate drain 0.5 0.1 c 1.5, 4 places source r 1.6, 2 places 2.4 6.45 0.05 3.2 12.9 0.2 2.5 min both leads 17.0 0.2 21.0 0.3 10.7 12.0 +0.1 -0.05 0.1 1.6 2.6 0.2 5.0 max 0.2 max gate side indicator depression package outline t-61 electrical characteristics (t c = 25 c) part number NEZ1011-8E symbols characteristics units min typ max test conditions p 1db output power at 1 db compression dbm 38.5 39.5 f = 10.7, 11.2, 11.7 ghz g l linear gain db 6.0 6.5 v ds = 9 v, i dsq = 2.0 a add power added efficiency % 25 rg = 100 ? i ds drain current a 3.0 4.0 im 3 third order intermodulation distortion dbc -40 p out = +35 dbm (two tones) i dss saturated drain current a 2.8 6.4 10.0 v ds = 1.5 v, v gs = 0 v v p pinch-off voltage v -3.0 -1.3 -0.5 v ds = 2.5 v, i ds = 40 ma bv gd gate to drain breakdown voltage v 15 18 i gd = 40 ma r th thermal resistance ?c/w 2.0 2.5 channel to case symbols parameters units min typ max v ds drain to source voltage v 9 9 9 t ch channel temperature c 130 g comp input power db comp 3 rg gate resistance ? 25 50 recommended operating limits
NEZ1011-8E exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ? internet: http://www.cel.com 10/16/2000 data subject to change without notice 40 35 30 25 20 25 30 35 100 80 60 40 20 0 pout add typical performance curves output power, drain current and efficiency vs. input power output power, p out (dbm) efficiency, add (%) input power, p in (dbm) absolute maximum ratings 1 (t a = 25 c unless otherwise noted) symbols parameters units ratings v ds drain to source voltage v 15 v gs gate to source voltage v -7 i ds drain current a i dss i gf gate forward current ma 80 i gr gate reverse current ma -80 p t total power dissipation 2 w60 t ch channel temperature c 175 t stg storage temperature c -65 to +175 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. t c = 25 ? c typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang 10.1 0.651 -23.94 2.157 9.63 0.068 -42.73 0.258 -41.16 10.3 0.615 -40.07 2.124 -17.97 0.071 -65.64 0.277 -55.41 10.5 0.590 -57.16 2.168 -46.56 0.077 -94.35 0.286 -71.22 10.7 0.563 -76.46 2.225 -76.37 0.082 -122.32 0.271 -87.48 10.9 0.529 -99.37 2.355 -107.66 0.086 -150.69 0.240 -105.61 11.1 0.472 -126.59 2.383 -140.14 0.094 177.84 0.184 -128.67 11.3 0.401 -158.63 2.441 -173.94 0.100 146.11 0.112 -161.74 11.5 0.341 161.83 2.399 151.91 0.098 112.91 0.068 122.79 11.7 0.327 118.35 2.292 118.38 0.092 80.50 0.123 53.88 11.9 0.362 79.87 2.198 84.49 0.091 50.58 0.208 23.28 12.1 0.420 49.35 2.081 53.46 0.097 19.69 0.289 1.85 12.3 0.473 23.97 2.009 20.17 0.091 -12.61 0.355 -17.42 NEZ1011-8E v ds = 9 v, i ds = 2.0 a 2.0 13 ghz 13 ghz 1.0 0.5 - 0.5 - 1.0 - 2.0 0 1 2 1 s22 9.5 ghz s11 9.5 ghz 2 +90 -90 +45 -45 +135 -135 +180 0 s12 9.5 ghz 1 2 s21 9.5 ghz 13 ghz 2 1 marker 1. 10.7 ghz 2. 11.7 ghz
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